 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm * * * Enhancement-mode High speed: tf = 0.30 s (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 400 25 40 100 100 150 -55~150 Unit V V A W C C Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA TO-220AB 2-10P1C Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth(j-c) 15 V 0 -15 V 3/4 Test Condition VGE = 25 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz 3.33 9 39 W Weight: 2 g (typ.) Min 3/4 3/4 3.0 3/4 3/4 Typ. 3/4 3/4 3/4 1.8 3900 0.33 0.43 0.30 0.54 3/4 Max 500 1.0 6.0 2.5 3/4 Unit nA mA V V pF 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.40 ms 200 V 3/4 1.25 C/W 1 2003-03-18 GT40G121 IC - VCE 100 20 10 80 10 9 8 VCE - VGE Common emitter (V) (A) IC Collector-emitter voltage VCE 15 8 Tc = -40C 60 VGE = 7 V 40 6 Collector current 4 80 60 30 20 Common emitter Tc = 25C 0 0 1 2 3 4 5 2 IC = 10 A 0 0 4 8 12 16 20 24 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter 10 VCE - VGE Common emitter (V) VCE Collector-emitter voltage 6 Collector-emitter voltage VCE 8 Tc = 25C (V) 8 Tc = 125C 6 4 80 60 30 4 80 60 30 2 IC = 10 A 0 0 4 8 12 16 20 24 2 IC = 10 A 0 0 4 8 12 16 20 24 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter 4 Common emitter VCE (sat) - Tc Gate-emitter saturation voltage VCE (sat) (V) VCE = 5 V 80 VGE = 15 V 3 IC 60 Collector current (A) 2 80 60 30 40 25 20 Tc = 125C 1 IC = 10 A -40 0 0 2 4 6 8 10 0 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 2 2003-03-18 GT40G121 VCE, VGE - QG 20 10000 Common emitter 5000 3000 C - VCE cies Common emitter VGE = 0 V f = 1 MHz Tc = 25C Collector-emitter voltage VCE (25 V) Gate-emitter voltage VGE (V) (pF) C Collector current 1000 500 300 Coes 100 50 30 Cres 100 150 10 16 RL = 3.3 W Tc = 25C 12 VCE = 200 V 8 4 0 0 40 80 120 160 200 1 3 10 30 100 300 1000 3000 Collector-emitter voltage Gate charge QG (nC) VCE (V) Switching time - RG 5 Common emitter 3 VCC = 200 V VGG = 15 V IC = 60 A Tc = 25C 1 toff 0.5 0.3 ton tr tf 100 300 Safe operating area IC max (pulse) IC max (continuous) 1 ms* DC operation 10 ms* 100 ms* (ms) (A) Collector current IC 50 30 Switching time 10 10 ms* (pulse) 0.1 3 5 10 30 50 100 300 Gate resistance RG (9) 5 *Single non-repetitive 3 pulse Tc = 25C Curves must be 1 derated linearly with increase in 0.5 temperature. 0.3 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Switching time - IC 1 toff ton tr tf 0.5 Switching time (ms) 0.3 0.1 0.05 0.03 Common emitter VCC = 200 V VGG = 15 V RG = 39 W Tc = 25C 0 10 20 30 40 50 60 70 0.01 Collector current IC (A) 3 2003-03-18 GT40G121 Reverse bias safe operating area Transient thermal impedance rth (t) (C/W) 300 10 2 Tc = 25C rth (t) - tw 100 10 1 (A) 50 30 IC 10 0 Collector current 10 5 3 Tj < 125C = VGE = 15 V RG = 39 W 1 1 3 10 30 100 300 1000 10 -1 10 -2 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Collector-emitter voltage VCE (V) Pulse Width tw (s) 4 2003-03-18 GT40G121 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2003-03-18 |
Price & Availability of GT40G121
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |